LARGE-AREA BACK-ILLUMINATED INGAAS-INP PHOTO-DIODES FOR USE AT 1 TO 1.6 MU-M WAVELENGTH

被引：7

作者：

BURRUS, CA

DENTAI, AG

LEE, TP

机构：

来源：

OPTICS COMMUNICATIONS | 1981年 / 38卷 / 02期

关键词：

D O I：

10.1016/0030-4018(81)90213-3

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

收藏

页码：124 / 126

页数：3

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[1] INGAASP P-I-N PHOTO-DIODES WITH LOW DARK CURRENT AND SMALL CAPACITANCE
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[J]. ELECTRONICS LETTERS, 1979, 15 (20) : 655 - 657
[2] HIGH-SPEED DIGITAL LIGHTWAVE COMMUNICATION USING LEDS AND PIN PHOTO-DIODES AT 1.3-MU-M
GLOGE, D
ALBANESE, A
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CHINNOCK, EL
COPELAND, JA
DENTAI, AG
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LI, T
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[J]. BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (08): : 1365 - 1382
[3] SMALL AREA INGAAS-INP P-I-N PHOTO-DIODES - FABRICATION, CHARACTERISTICS AND PERFORMANCE OF DEVICES IN 274-MB-S AND 45-MB-S LIGHTWAVE RECEIVERS AT 1.31 MU-M WAVELENGTH
LEE, TP
BURRUS, CA
DENTAI, AG
OGAWA, K
[J]. ELECTRONICS LETTERS, 1980, 16 (04) : 155 - 156
[4] INGAAS-INP P-I-N PHOTO-DIODES FOR LIGHTWAVE COMMUNICATIONS AT THE 0.95-1.65 MU-M WAVELENGTH
LEE, TP
BURRUS, CA
DENTAI, AG
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 232 - 238