HIGH-SPEED DIGITAL LIGHTWAVE COMMUNICATION USING LEDS AND PIN PHOTO-DIODES AT 1.3-MU-M

[1] NOISE BEHAVIOR OF GAAS FIELD-EFFECT TRANSISTORS WITH SHORT GATE LENGTHS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) : 674 - +

[2] SMALL-AREA, HIGH-RADIANCE CW INGAASP LEDS EMITTING AT 1.2 TO 1.3 MUM [J]. ELECTRONICS LETTERS, 1977, 13 (16) : 484 - 485

[3] BASEBAND CHARACTERISTICS OF LONG-WAVELENGTH LED SYSTEMS [J]. ELECTRONICS LETTERS, 1980, 16 (10) : 366 - 367

[4] INPUT AMPLIFIERS FOR OPTICAL PCM RECEIVERS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1974, 53 (09): : 1771 - 1793

[5] GAINASP-INP FAST, HIGH-RADIANCE, 1.05-1.3-MU-M WAVELENGTH LEDS WITH EFFICIENT LENS COUPLING TO SMALL NUMERICAL APERTURE SILICA OPTICAL FIBERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (08) : 1215 - 1220

[6] MG-DOPED INGAASP-INP LEDS FOR HIGH-BIT-RATE OPTICAL-COMMUNICATION SYSTEMS [J]. ELECTRONICS LETTERS, 1979, 15 (22) : 702 - 703

[7] SMALL AREA INGAAS-INP P-I-N PHOTO-DIODES - FABRICATION, CHARACTERISTICS AND PERFORMANCE OF DEVICES IN 274-MB-S AND 45-MB-S LIGHTWAVE RECEIVERS AT 1.31 MU-M WAVELENGTH [J]. ELECTRONICS LETTERS, 1980, 16 (04) : 155 - 156

[8] LEE TP, 1978, IEEE J QUANTUM ELECT, V14, P150

[9] LEHENY RF, 1979, ELECTRON LETT, V15, P713, DOI 10.1049/el:19790507

[10] LI T, 1978, IEEE T COMMUN, V26, P946

[1] NOISE BEHAVIOR OF GAAS FIELD-EFFECT TRANSISTORS WITH SHORT GATE LENGTHS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) : 674 - +

[2] SMALL-AREA, HIGH-RADIANCE CW INGAASP LEDS EMITTING AT 1.2 TO 1.3 MUM [J]. ELECTRONICS LETTERS, 1977, 13 (16) : 484 - 485

[3] BASEBAND CHARACTERISTICS OF LONG-WAVELENGTH LED SYSTEMS [J]. ELECTRONICS LETTERS, 1980, 16 (10) : 366 - 367

[4] INPUT AMPLIFIERS FOR OPTICAL PCM RECEIVERS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1974, 53 (09): : 1771 - 1793

[5] GAINASP-INP FAST, HIGH-RADIANCE, 1.05-1.3-MU-M WAVELENGTH LEDS WITH EFFICIENT LENS COUPLING TO SMALL NUMERICAL APERTURE SILICA OPTICAL FIBERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (08) : 1215 - 1220

[6] MG-DOPED INGAASP-INP LEDS FOR HIGH-BIT-RATE OPTICAL-COMMUNICATION SYSTEMS [J]. ELECTRONICS LETTERS, 1979, 15 (22) : 702 - 703

[7] SMALL AREA INGAAS-INP P-I-N PHOTO-DIODES - FABRICATION, CHARACTERISTICS AND PERFORMANCE OF DEVICES IN 274-MB-S AND 45-MB-S LIGHTWAVE RECEIVERS AT 1.31 MU-M WAVELENGTH [J]. ELECTRONICS LETTERS, 1980, 16 (04) : 155 - 156

[8] LEE TP, 1978, IEEE J QUANTUM ELECT, V14, P150

[9] LEHENY RF, 1979, ELECTRON LETT, V15, P713, DOI 10.1049/el:19790507

[10] LI T, 1978, IEEE T COMMUN, V26, P946