HIGH-GAIN INGAAS/INP HETEROSTRUCTURE BIPOLAR-TRANSISTORS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY

被引：29

作者：

NOTTENBURG, RN ^{[1
]}

TEMKIN, H ^{[1
]}

PANISH, MB ^{[1
]}

HAMM, RA ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 17期

关键词：

D O I：

10.1063/1.97438

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：1112 / 1114

页数：3

相关论文

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