ROOM-TEMPERATURE ELECTRON-DIFFUSION LENGTHS IN LIQUID-PHASE EPITAXIAL INGAASP AND INGAAS

被引：23

作者：

TASHIMA, MM

COOK, LW

STILLMAN, GE

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 12期

关键词：

D O I：

10.1063/1.92625

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：960 / 961

页数：2

共 10 条

[1] ANTYPAS GA, 1976, I C SER B, V33, P96
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[3] VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS
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[4] EFFECTS OF A FINITE MELT ON THE THICKNESS AND COMPOSITION OF LIQUID-PHASE EPITAXIAL INGAASP AND INGAAS LAYERS GROWN BY THE DIFFUSION-LIMITED STEP-COOLING TECHNIQUE
COOK, LW
TASHIMA, MM
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[5] MINORITY-CARRIER DIFFUSION LENGTH AND RECOMBINATION LIFETIME IN GAAS-GE PREPARED BY LIQUID-PHASE EPITAXY
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[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) : 827 - 831
[6] UV MICROPROBE TECHNIQUE FOR MEASUREMENT OF MINORITY-CARRIER DIFFUSIOM LENGTH IN GAP P-N JUNCTION MATERIAL
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HASZKO, SE
BERGH, AA
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) : 5117 - +
[7] VAPOR-PHASE GROWTH OF (INDIUM,GA)(ARSENIC,P) QUATERNARY ALLOYS
OLSEN, GH
ZAMEROWSKI, TJ
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 128 - 138
[8] MEASUREMENT OF DIFFUSION-COEFFICIENT AND SURFACE RECOMBINATION VELOCITY FOR P-INGAASP GROWN ON INP
SAKAI, S
UMENO, M
AMEMIYA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) : 109 - 113
[9] PROPERTIES OF ZN-DOPED P-TYPE IN0.53GA0.47AS ON INP SUBSTRATE
TAKEDA, Y
KUZUHARA, M
SASAKI, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : 899 - 903
[10] THE EFFECT OF LATTICE MISMATCH ON HOLE DIFFUSION LENGTHS IN LIQUID-PHASE EPITAXIAL INGAASP (LAMBDA-G=1.15 MU-M)-INP
TASHIMA, MM
COOK, LW
TABATABAIE, N
STILLMAN, GE
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (12) : 1009 - 1011

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