PROPERTIES OF ZN-DOPED P-TYPE IN0.53GA0.47AS ON INP SUBSTRATE

被引：27

作者：

TAKEDA, Y

KUZUHARA, M

SASAKI, A

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 05期

关键词：

D O I：

10.1143/JJAP.19.899

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：899 / 903

页数：5

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