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DETERMINATION OF ELECTRON DIFFUSION LENGTH FROM PHOTOLUMINESCENCE MEASUREMENTS IN INXGA1-XAS JUNCTIONS
被引:8
作者
:
OTA, T
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,ELECT COMMUN LAB,MUSASHINO 180,TOKYO,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,ELECT COMMUN LAB,MUSASHINO 180,TOKYO,JAPAN
OTA, T
[
1
]
OE, K
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,ELECT COMMUN LAB,MUSASHINO 180,TOKYO,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,ELECT COMMUN LAB,MUSASHINO 180,TOKYO,JAPAN
OE, K
[
1
]
YAMAGUCHI, M
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,ELECT COMMUN LAB,MUSASHINO 180,TOKYO,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,ELECT COMMUN LAB,MUSASHINO 180,TOKYO,JAPAN
YAMAGUCHI, M
[
1
]
机构
:
[1]
NIPPON TELEGRAPH & TEL PUBL CORP,ELECT COMMUN LAB,MUSASHINO 180,TOKYO,JAPAN
来源
:
JOURNAL OF APPLIED PHYSICS
|
1975年
/ 46卷
/ 08期
关键词
:
D O I
:
10.1063/1.322097
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:3674 / 3675
页数:2
相关论文
共 7 条
[1]
ELECTRON DIFFUSION LENGTH IN SOLUTION-GROWN GAAS-GE+
[J].
ASHLEY, KL
论文数:
0
引用数:
0
h-index:
0
机构:
SO METHODIST UNIV, ELECTR SCI CTR, DALLAS, TX 75222 USA
SO METHODIST UNIV, ELECTR SCI CTR, DALLAS, TX 75222 USA
ASHLEY, KL
;
CARR, DL
论文数:
0
引用数:
0
h-index:
0
机构:
SO METHODIST UNIV, ELECTR SCI CTR, DALLAS, TX 75222 USA
SO METHODIST UNIV, ELECTR SCI CTR, DALLAS, TX 75222 USA
CARR, DL
;
ROMANOMO.R
论文数:
0
引用数:
0
h-index:
0
机构:
SO METHODIST UNIV, ELECTR SCI CTR, DALLAS, TX 75222 USA
SO METHODIST UNIV, ELECTR SCI CTR, DALLAS, TX 75222 USA
ROMANOMO.R
.
APPLIED PHYSICS LETTERS,
1973,
22
(01)
:23
-25
[2]
ASHLEY KL, 1967, IEEE T ELECTRON DEV, V14, P429
[3]
OPTICAL-PROPERTIES OF VAPOR-GROWN INXGA1-X AS EPITAXIAL-FILMS ON GAAS AND INXGA1-XP SUBSTRATES
[J].
ENSTROM, RE
论文数:
0
引用数:
0
h-index:
0
机构:
RCA, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
RCA, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
ENSTROM, RE
;
ZANZUCCHI, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
RCA, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
ZANZUCCHI, PJ
;
APPERT, JR
论文数:
0
引用数:
0
h-index:
0
机构:
RCA, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
RCA, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
APPERT, JR
.
JOURNAL OF APPLIED PHYSICS,
1974,
45
(01)
:300
-306
[4]
MINORITY-CARRIER DIFFUSION LENGTH AND RECOMBINATION LIFETIME IN GAAS-GE PREPARED BY LIQUID-PHASE EPITAXY
[J].
ETTENBERG, M
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
ETTENBERG, M
;
KRESSEL, H
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
KRESSEL, H
;
GILBERT, SL
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
GILBERT, SL
.
JOURNAL OF APPLIED PHYSICS,
1973,
44
(02)
:827
-831
[5]
OPTICAL PROPERTIES OF N-TYPE GAAS .I. DETERMINATION OF HOLE DIFFUSION LENGTH FROM OPTICAL ABSORPTION AND PHOTOLUMINESCENCE MEASUREMENTS
[J].
HWANG, CJ
论文数:
0
引用数:
0
h-index:
0
HWANG, CJ
.
JOURNAL OF APPLIED PHYSICS,
1969,
40
(09)
:3731
-&
[6]
UV MICROPROBE TECHNIQUE FOR MEASUREMENT OF MINORITY-CARRIER DIFFUSIOM LENGTH IN GAP P-N JUNCTION MATERIAL
[J].
HWANG, CJ
论文数:
0
引用数:
0
h-index:
0
HWANG, CJ
;
HASZKO, SE
论文数:
0
引用数:
0
h-index:
0
HASZKO, SE
;
BERGH, AA
论文数:
0
引用数:
0
h-index:
0
BERGH, AA
.
JOURNAL OF APPLIED PHYSICS,
1971,
42
(12)
:5117
-+
[7]
NEW GRADING LAYER FOR LIQUID EPITAXIAL-GROWTH OF GAXIN1-XAS ON GAAS SUBSTRATE
[J].
NAGAI, H
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN
NAGAI, H
;
NOGUCHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN
NOGUCHI, Y
.
APPLIED PHYSICS LETTERS,
1975,
26
(03)
:108
-110
←
1
→
共 7 条
[1]
ELECTRON DIFFUSION LENGTH IN SOLUTION-GROWN GAAS-GE+
[J].
ASHLEY, KL
论文数:
0
引用数:
0
h-index:
0
机构:
SO METHODIST UNIV, ELECTR SCI CTR, DALLAS, TX 75222 USA
SO METHODIST UNIV, ELECTR SCI CTR, DALLAS, TX 75222 USA
ASHLEY, KL
;
CARR, DL
论文数:
0
引用数:
0
h-index:
0
机构:
SO METHODIST UNIV, ELECTR SCI CTR, DALLAS, TX 75222 USA
SO METHODIST UNIV, ELECTR SCI CTR, DALLAS, TX 75222 USA
CARR, DL
;
ROMANOMO.R
论文数:
0
引用数:
0
h-index:
0
机构:
SO METHODIST UNIV, ELECTR SCI CTR, DALLAS, TX 75222 USA
SO METHODIST UNIV, ELECTR SCI CTR, DALLAS, TX 75222 USA
ROMANOMO.R
.
APPLIED PHYSICS LETTERS,
1973,
22
(01)
:23
-25
[2]
ASHLEY KL, 1967, IEEE T ELECTRON DEV, V14, P429
[3]
OPTICAL-PROPERTIES OF VAPOR-GROWN INXGA1-X AS EPITAXIAL-FILMS ON GAAS AND INXGA1-XP SUBSTRATES
[J].
ENSTROM, RE
论文数:
0
引用数:
0
h-index:
0
机构:
RCA, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
RCA, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
ENSTROM, RE
;
ZANZUCCHI, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
RCA, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
ZANZUCCHI, PJ
;
APPERT, JR
论文数:
0
引用数:
0
h-index:
0
机构:
RCA, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
RCA, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
APPERT, JR
.
JOURNAL OF APPLIED PHYSICS,
1974,
45
(01)
:300
-306
[4]
MINORITY-CARRIER DIFFUSION LENGTH AND RECOMBINATION LIFETIME IN GAAS-GE PREPARED BY LIQUID-PHASE EPITAXY
[J].
ETTENBERG, M
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
ETTENBERG, M
;
KRESSEL, H
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
KRESSEL, H
;
GILBERT, SL
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
GILBERT, SL
.
JOURNAL OF APPLIED PHYSICS,
1973,
44
(02)
:827
-831
[5]
OPTICAL PROPERTIES OF N-TYPE GAAS .I. DETERMINATION OF HOLE DIFFUSION LENGTH FROM OPTICAL ABSORPTION AND PHOTOLUMINESCENCE MEASUREMENTS
[J].
HWANG, CJ
论文数:
0
引用数:
0
h-index:
0
HWANG, CJ
.
JOURNAL OF APPLIED PHYSICS,
1969,
40
(09)
:3731
-&
[6]
UV MICROPROBE TECHNIQUE FOR MEASUREMENT OF MINORITY-CARRIER DIFFUSIOM LENGTH IN GAP P-N JUNCTION MATERIAL
[J].
HWANG, CJ
论文数:
0
引用数:
0
h-index:
0
HWANG, CJ
;
HASZKO, SE
论文数:
0
引用数:
0
h-index:
0
HASZKO, SE
;
BERGH, AA
论文数:
0
引用数:
0
h-index:
0
BERGH, AA
.
JOURNAL OF APPLIED PHYSICS,
1971,
42
(12)
:5117
-+
[7]
NEW GRADING LAYER FOR LIQUID EPITAXIAL-GROWTH OF GAXIN1-XAS ON GAAS SUBSTRATE
[J].
NAGAI, H
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN
NAGAI, H
;
NOGUCHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN
NOGUCHI, Y
.
APPLIED PHYSICS LETTERS,
1975,
26
(03)
:108
-110
←
1
→