ELECTRON-MOBILITY IN IN1-XGAXAS EPITAXIAL LAYER

被引：24

作者：

KATODA, T ^{[1
]}

OSAKA, F ^{[1
]}

SUGANO, T ^{[1
]}

机构：

[1] UNIV TOKYO,DEPT ELECTR ENGN,HONGO,BUNKYO,TOKYO,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1974年 / 13卷 / 03期

关键词：

D O I：

10.1143/JJAP.13.561

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：561 / 562

页数：2

相关论文

共 7 条

[1] BURDUKOV YM, 1971, SOV PHYS SEMICOND+, V4, P1697
[2] PREPARATION OF EPITAXIAL GAXIN1-XAS
CONRAD, RW
HOYT, PL
MARTIN, DD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) : 164 - &
[3] HIGH-FIELD TRANSPORT IN N-TYPE GAAS
CONWELL, EM
VASSELL, MO
[J]. PHYSICAL REVIEW, 1968, 166 (03): : 797 - +
[4] DISORDER SCATTERING IN SOLID-SOLUTIONS OF III-V SEMICONDUCTING COMPOUNDS
MAKOWSKI, L
GLICKSMAN, M
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (03) : 487 - 492
[5] Nordheim L, 1931, ANN PHYS-BERLIN, V9, P607
[6] PREPARATION AND PROPERTIES OF BULK IN1-XGAXAS ALLOYS
WAGNER, JW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (09) : 1193 - &
[7] ANOMALOUS MOBILITY EFFECTS IN SOME SEMICONDUCTORS AND INSULATORS
WEISBERG, LR
[J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (05) : 1817 - &