GE-DOPED INXGA1-XAS P-N-JUNCTIONS

被引：16

作者：

KURIHARA, M ^{[1
]}

MORIIZUMI, T ^{[1
]}

TAKAHASHI, K ^{[1
]}

机构：

[1] TOKYO INST TECHNOL, DEPT ELECTR, MEGURO, TOKYO, JAPAN

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 07期

关键词：

D O I：

10.1016/0038-1101(73)90172-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：763 / 771

页数：9

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