14 GHZ BANDWIDTH MSM PHOTODIODE ALGAAS/GAAS HEMT MONOLITHIC INTEGRATED OPTOELECTRONIC RECEIVER

被引：11

作者：

HURM, V

LUDWIG, M

ROSENZWEIG, J

BENZ, W

BERROTH, M

BOSCH, R

BRONNER, W

HULSMANN, A

KOHLER, K

RAYNOR, B

SCHNEIDER, J

机构：

[1] Fraunhofer-Institut für Angewandte Festkörperphysik

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 01期

关键词：

INTEGRATED OPTOELECTRONICS; OPTICAL RECEIVERS;

D O I：

10.1049/el:19930006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A monolithic optoelectronic receiver consisting of an MSM photodiode and a two-stage amplifier has been fabricated using an enhancement/depletion 0.3 mum recessed-gate AlGaAs/GaAs HEMT process. The bandwidth of 14.3 GHz implies suitability for transmission rates of up to 20 Gbit/s. The transimpedance is 670 OMEGA (into 50 OMEGA) and the projected sensitivity is -16.4 dBm (BER = 10(-9)).

引用

页码：9 / 10

页数：2

共 6 条

[1] E-BEAM DIRECT-WRITE IN A DRY-ETCHED RECESS GATE HEMT PROCESS FOR GAAS/ALGAAS CIRCUITS [J].

HULSMANN, A ;

KAUFEL, G ;

KOHLER, K ;

RAYNOR, B ;

SCHNEIDER, J ;

JAKOBUS, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (10) :2317-2320

[2] 8.2 GHZ BANDWIDTH MONOLITHIC INTEGRATED OPTOELECTRONIC RECEIVER USING MSM PHOTODIODE AND 0.5-MU-M RECESSED-GATE ALGAAS/GAAS HEMTS [J].

HURM, V ;

ROSENZWEIG, J ;

LUDWIG, M ;

BENZ, W ;

BERROTH, M ;

HUELSMANN, A ;

KAUFEL, G ;

KOEHLER, K ;

RAYNOR, B ;

SCHNEIDER, J .

ELECTRONICS LETTERS, 1991, 27 (09) :734-735

[3]

KETTERSON A, 1992, 50TH DEV RES C CAMBR

[4]

KOHLER K, 1990, I PHYS C SER, V112, P521

[5]

Pedrotti K. D., 1991, 13th Annual GaAs IC Symposium Technical Digest 1991 (Cat. No.91CH3059-3), P205, DOI 10.1109/GAAS.1991.172673

[6]

Smith R. G., 1982, TOP APPL PHYS, V39, P89

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