MONOLITHIC INTEGRATION OF LASERS WITH FET AND BIPOLAR-TRANSISTORS IN INVERSION CHANNEL TECHNOLOGY

被引：6

作者：

EVALDSSON, PA

VANG, TA

TAYLOR, GW

SARGOOD, SK

KIELY, PA

COOKE, P

机构：

[1] AT&T Bell Laboratories, Holmdel, New Jersey

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 01期

关键词：

TRANSISTORS; BIPOLAR DEVICES; FIELD-EFFECT TRANSISTORS; LASERS; INTEGRATED OPTOELECTRONICS;

D O I：

10.1049/el:19930040

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first monolithic integration of lasers with HFETs and bipolar transistors in inversion channel technology is presented. A threshold current of 2 mA and a slope efficiency of 8 mW/mA was obtained for the bipolar/laser circuit. The transfer characteristic for the integrated HFET/laser converts voltage to output power. The output efficiency for this circuit was 2mW/V, where the voltage was divided across the laser and the HFET.

引用

页码：60 / 62

页数：3

共 7 条

[1] SMALL-SIGNAL AND CONTINUOUS WAVE OPERATION OF THE LATERAL CURRENT INJECTION HETEROSTRUCTURE FIELD-EFFECT LASER [J].