DEMONSTRATION OF A HETEROSTRUCTURE FIELD-EFFECT LASER FOR OPTOELECTRONIC INTEGRATION

被引：16

作者：

TAYLOR, GW

CLAISSE, PR

COOKE, P

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 07期

关键词：

D O I：

10.1063/1.104562

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new laser structure suitable for optoelectronic integration is reported. It utilizes field effect at a heterointerface within the same structure used to build field-effect transistors. A threshold current density of 560 A/cm2 and a differential quantum efficiency of 56% were achieved.

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页码：666 / 668

页数：3

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