GAAS/ALGAAS INVERSION CHANNEL DEVICES FOR AN INTEGRATED OPTO-ELECTRONIC TECHNOLOGY

被引:1
作者
TAYLOR, GW [1 ]
CRAWFORD, DL [1 ]
KIELY, PA [1 ]
SARGOOD, SK [1 ]
COOKE, P [1 ]
IZABELLE, A [1 ]
CHANG, TY [1 ]
TELL, B [1 ]
LEBBY, MS [1 ]
BROWNGOEBELER, K [1 ]
SIMMONS, JG [1 ]
机构
[1] AT&T BELL LABS,HOLMDEL,NJ 07733
关键词
D O I
10.1109/16.8871
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:2446 / 2446
页数:1
相关论文
共 3 条
[1]   A NEW DOUBLE HETEROSTRUCTURE OPTOELECTRONIC SWITCHING DEVICE USING MOLECULAR-BEAM EPITAXY [J].
TAYLOR, GW ;
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JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) :596-600
[2]   THE BIPOLAR INVERSION CHANNEL FIELD-EFFECT TRANSISTOR (BICFET) - A NEW FIELD-EFFECT SOLID-STATE DEVICE - THEORY AND STRUCTURES [J].
TAYLOR, GW ;
SIMMONS, JG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2345-2367
[3]   HETEROJUNCTION FIELD-EFFECT TRANSISTOR (HFET) [J].
TAYLOR, GW ;
SIMMONS, JG .
ELECTRONICS LETTERS, 1986, 22 (15) :784-786