A NEW DOUBLE HETEROSTRUCTURE OPTOELECTRONIC SWITCHING DEVICE USING MOLECULAR-BEAM EPITAXY

被引：120

作者：

TAYLOR, GW

SIMMONS, JG

CHO, AY

MAND, RS

机构：

[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 02期

关键词：

LASERS; SEMICONDUCTOR - MOLECULAR BEAM EPITAXY - SEMICONDUCTOR MATERIALS - Growth;

D O I：

10.1063/1.336618

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two-terminal switching action is observed in a new optoelectronic device structure. The device has a high-impedance state without light emission and a low-impedance state characterized by strong spontaneous emission. The transition from either state to the other may be induced by the appropriate optical or electrical input. It is clear that with the appropriate optical cavity construction the switching device will operate as a laser in the on state rather than in the spontaneous mode reported here. In principle, the device offers large digital optical gain determined by its optical sensitivity and its maximum output power.

引用

页码：596 / 600

页数：5

共 7 条

[1]

ALDER MS, 1984, IEEE T ELECTRON DEV, V31, P1570

[2] ZNSE ELECTROLUMINESCENT DEVICE EXHIBITING SWITCHING AND MEMORY [J].