AN N-CHANNEL BICFET IN THE GAAS/ALGAAS MATERIAL SYSTEM

被引：14

作者：

TAYLOR, GW

KIELY, PA

IZABELLE, A

CRAWFORD, DL

LEBBY, MS

CHANG, TY

TELL, B

GOEBELER, KB

SIMMONS, JG

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 02期

关键词：

D O I：

10.1109/55.32438

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：88 / 90

页数：3

共 11 条

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SIMMONS, JG .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (06) :278-280

[2] GAAS INVERSION-BASE BIPOLAR-TRANSISTOR (GAAS IBT) [J].

MATSUMOTO, K ;

HAYASHI, Y ;

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[3] A NEW ULTRA-HIGH-SPEED HETEROJUNCTION TRANSISTOR [J].

SIMMONS, JG ;

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SIMMONS, JG ;

TAYLOR, GW .

SOLID-STATE ELECTRONICS, 1986, 29 (03) :287-303

[5]

Taylor G. W., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P817

[6] VERY HIGH-TRANSCONDUCTANCE HETEROJUNCTION FIELD-EFFECT TRANSISTOR (HFET) [J].

TAYLOR, GW ;

LEBBY, MS ;

CHANG, TY ;

GNALL, RN ;

SAUER, N ;

TELL, B ;

SIMMONS, JG .

ELECTRONICS LETTERS, 1987, 23 (02) :77-79

[7] THE BIPOLAR INVERSION CHANNEL FIELD-EFFECT TRANSISTOR (BICFET) - A NEW FIELD-EFFECT SOLID-STATE DEVICE - THEORY AND STRUCTURES [J].

TAYLOR, GW ;

SIMMONS, JG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2345-2367

[8] SMALL-SIGNAL MODEL AND HIGH-FREQUENCY PERFORMANCE OF THE BICFET [J].

TAYLOR, GW ;

SIMMONS, JG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2368-2377

[9] HETEROJUNCTION FIELD-EFFECT TRANSISTOR (HFET) [J].

TAYLOR, GW ;

SIMMONS, JG .

ELECTRONICS LETTERS, 1986, 22 (15) :784-786

[10] DEMONSTRATION OF A P-CHANNEL GAAS/ALGAAS BICFET [J].

TAYLOR, GW ;

LEBBY, MS ;

IZABELLE, A ;

TELL, B ;

BROWNGOEBELER, K ;

CHANG, TY ;

SIMMONS, JG .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (02) :84-86

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