A P-CHANNEL BICFET IN THE INGAAS/INALAS MATERIAL SYSTEM

被引：9

作者：

LEBBY, MS

TAYLOR, GW

IZABELLE, A

TELL, B

BROWNGOEBELER, K

CHANG, TY

SIMMONS, JG

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 06期

关键词：

D O I：

10.1109/55.716

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：278 / 280

页数：3

共 9 条

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[2]

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[4] HIGH-GAIN AL0.48IN0.52AS/GA0.53AS VERTICAL N-P-N HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[5]

MISHRA VK, 1987, IEDM WASHINGTON

[6] OPERATIONAL SILICON BIPOLAR INVERSION-CHANNEL FIELD-EFFECT TRANSISTOR (BICFET) [J].

MORAVVEJFARSHI, MK ;

GREEN, MA .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) :513-515

[7]

PEOPLE R, 1983, APPL PHYS LETT, V43, P1

[8] THE BIPOLAR INVERSION CHANNEL FIELD-EFFECT TRANSISTOR (BICFET) - A NEW FIELD-EFFECT SOLID-STATE DEVICE - THEORY AND STRUCTURES [J].

TAYLOR, GW ;

SIMMONS, JG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2345-2367

[9] DEMONSTRATION OF A P-CHANNEL GAAS/ALGAAS BICFET [J].

TAYLOR, GW ;

LEBBY, MS ;

IZABELLE, A ;

TELL, B ;

BROWNGOEBELER, K ;

CHANG, TY ;

SIMMONS, JG .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (02) :84-86

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