DEMONSTRATION OF A P-CHANNEL GAAS/ALGAAS BICFET

被引：14

作者：

TAYLOR, GW

LEBBY, MS

IZABELLE, A

TELL, B

BROWNGOEBELER, K

CHANG, TY

SIMMONS, JG

机构：

[1] AT&T Bell Lab, Holmdel, NJ, USA, AT&T Bell Lab, Holmdel, NJ, USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 02期

关键词：

D O I：

10.1109/55.2048

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

TRANSISTORS, FIELD EFFECT

引用

页码：84 / 86

页数：3

共 7 条

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[2]

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[5] OPERATIONAL SILICON BIPOLAR INVERSION-CHANNEL FIELD-EFFECT TRANSISTOR (BICFET) [J].

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GREEN, MA .

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[6] CONCEPTS OF GAIN AT AN OXIDE SEMICONDUCTOR INTERFACE AND THEIR APPLICATION TO THE TETRAN - A TUNNEL EMITTER TRANSISTOR - AND TO THE MIS SWITCHING DEVICE [J].

SIMMONS, JG ;

TAYLOR, GW .

SOLID-STATE ELECTRONICS, 1986, 29 (03) :287-303

[7] THE BIPOLAR INVERSION CHANNEL FIELD-EFFECT TRANSISTOR (BICFET) - A NEW FIELD-EFFECT SOLID-STATE DEVICE - THEORY AND STRUCTURES [J].

TAYLOR, GW ;

SIMMONS, JG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2345-2367

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