MODULATION-DOPED (AL,GA)AS/ALAS SUPERLATTICE - ELECTRON-TRANSFER INTO ALAS

被引：43

作者：

DRUMMOND, TJ

FRITZ, IJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 03期

关键词：

D O I：

10.1063/1.96193

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：284 / 286

页数：3

共 17 条

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[4]

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[6]

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[7]

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[9] NEGATIVE CHARGE, BARRIER HEIGHTS, AND THE CONDUCTION-BAND DISCONTINUITY IN ALXGA1-XAS CAPACITORS [J].

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JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2844-2853

[10] ELECTRICAL-PROPERTIES OF SI-DOPED ALXGA1-XAS LAYERS GROWN BY MBE [J].

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