共 6 条
OPERATIONAL SILICON BIPOLAR INVERSION-CHANNEL FIELD-EFFECT TRANSISTOR (BICFET)
被引:10
作者:

MORAVVEJFARSHI, MK
论文数: 0 引用数: 0
h-index: 0

GREEN, MA
论文数: 0 引用数: 0
h-index: 0
机构:
关键词:
D O I:
10.1109/EDL.1986.26456
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
引用
收藏
页码:513 / 515
页数:3
相关论文
共 6 条
[1]
CURRENT MULTIPLICATION IN METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL-DIODES
[J].
GREEN, MA
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SHEWCHUN, J
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SOLID-STATE ELECTRONICS,
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GREEN, MA
论文数: 0 引用数: 0
h-index: 0
机构: MCMASTER UNIV,DEPT ENGN PHYS,HAMILTON,ONTARIO,CANADA

SHEWCHUN, J
论文数: 0 引用数: 0
h-index: 0
机构: MCMASTER UNIV,DEPT ENGN PHYS,HAMILTON,ONTARIO,CANADA
[2]
FREQUENCY-RESPONSE OF CURRENT MULTIPLICATION PROCESS IN MIS TUNNEL-DIODES
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GREEN, MA
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TEMPLE, VAK
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SHEWCHUN, J
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SOLID-STATE ELECTRONICS,
1975, 18 (09)
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GREEN, MA
论文数: 0 引用数: 0
h-index: 0
机构: MCMASTER UNIV, INST MAT RES, HAMILTON, ONTARIO, CANADA

TEMPLE, VAK
论文数: 0 引用数: 0
h-index: 0
机构: MCMASTER UNIV, INST MAT RES, HAMILTON, ONTARIO, CANADA

SHEWCHUN, J
论文数: 0 引用数: 0
h-index: 0
机构: MCMASTER UNIV, INST MAT RES, HAMILTON, ONTARIO, CANADA
[3]
RELIABILITY OF 6-10 NM THERMAL SIO2-FILMS SHOWING INTRINSIC DIELECTRIC INTEGRITY
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HOKARI, Y
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BABA, T
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KAWAMURA, N
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IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985, 32 (11)
:2485-2491

HOKARI, Y
论文数: 0 引用数: 0
h-index: 0
机构:
NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI 213,JAPAN NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI 213,JAPAN

BABA, T
论文数: 0 引用数: 0
h-index: 0
机构:
NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI 213,JAPAN NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI 213,JAPAN

KAWAMURA, N
论文数: 0 引用数: 0
h-index: 0
机构:
NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI 213,JAPAN NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI 213,JAPAN
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1974, 121 (12)
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IRENE, EA
论文数: 0 引用数: 0
h-index: 0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
[5]
THE BIPOLAR INVERSION CHANNEL FIELD-EFFECT TRANSISTOR (BICFET) - A NEW FIELD-EFFECT SOLID-STATE DEVICE - THEORY AND STRUCTURES
[J].
TAYLOR, GW
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SIMMONS, JG
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IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985, 32 (11)
:2345-2367

TAYLOR, GW
论文数: 0 引用数: 0
h-index: 0
机构:
UNIV BRADFORD, BRADFORD BD7 1DP, W YORKSHIRE, ENGLAND UNIV BRADFORD, BRADFORD BD7 1DP, W YORKSHIRE, ENGLAND

SIMMONS, JG
论文数: 0 引用数: 0
h-index: 0
机构:
UNIV BRADFORD, BRADFORD BD7 1DP, W YORKSHIRE, ENGLAND UNIV BRADFORD, BRADFORD BD7 1DP, W YORKSHIRE, ENGLAND
[6]
SMALL-SIGNAL MODEL AND HIGH-FREQUENCY PERFORMANCE OF THE BICFET
[J].
TAYLOR, GW
;
SIMMONS, JG
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985, 32 (11)
:2368-2377

TAYLOR, GW
论文数: 0 引用数: 0
h-index: 0

SIMMONS, JG
论文数: 0 引用数: 0
h-index: 0