MONOLITHIC INTEGRATION OF A NEW OPTOELECTRONIC DEVICE BASED ON A MODULATION-DOPED HETEROSTRUCTURE

被引：4

作者：

HONDA, Y

SUEMUNE, I

YAMANISHI, M

机构：

[1] Department of Physical Electronics, Faculty of Engineering, Hiroshima University, Higashihiroshima 724, 1-4-1, Kagamiyama

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 06期

关键词：

D O I：

10.1063/1.105403

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Monolithic integration of a new type of optoelectronic device which functions not only as a lateral-current-injection laser but also as a junction field-effect transistor based on a modulation-doped heterostructure is proposed and demonstrated for the first time. The static and dynamic modulation characteristics of the integrated device were studied. The dynamic ON/OFF ratio of 9 in the light output was observed with the preliminary modulation experiment at the repetition frequency of 50 MHz.

引用

页码：621 / 623

页数：3

共 9 条

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