DEMONSTRATION AND PROPERTIES OF A PLANAR HETEROJUNCTION BIPOLAR-TRANSISTOR WITH LATERAL CURRENT FLOW

被引：10

作者：

THORNTON, RL

MOSBY, WJ

CHUNG, HF

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 10期

关键词：

D O I：

10.1109/16.40895

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2156 / 2164

页数：9

共 30 条

[1] HETEROJUNCTION BIPOLAR-TRANSISTORS FOR MICROWAVE AND MILLIMETER-WAVE INTEGRATED-CIRCUITS [J].

ASBECK, PM ;

CHANG, MF ;

WANG, KC ;

MILLER, DL ;

SULLIVAN, GJ ;

SHENG, NH ;

SOVERO, E ;

HIGGINS, JA .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1987, 35 (12) :1462-1470

[2]

BURNHAM RD, 1989, Patent No. 4824798

[3] ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED USING A SELF-ALIGNED DUAL-LIFT-OFF PROCESS [J].

CHANG, MCF ;

ASBECK, PM ;

WANG, KC ;

SULLIVAN, GJ ;

SHENG, NH ;

HIGGINS, JA ;

MILLER, DL .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) :303-305

[4] BACKGROUND DOPING DEPENDENCE OF SILICON DIFFUSION IN P-TYPE GAAS [J].

DEPPE, DG ;

HOLONYAK, N ;

KISH, FA ;

BAKER, JE .

APPLIED PHYSICS LETTERS, 1987, 50 (15) :998-1000

[5] IMPURITY-INDUCED LAYER-DISORDERED BURIED HETEROSTRUCTURE ALX GA1-XAS-GAAS QUANTUM-WELL EDGE-INJECTION LASER ARRAY [J].

DEPPE, DG ;

JACKSON, GS ;

HOLONYAK, N ;

HALL, DC ;

BURNHAM, RD ;

THORNTON, RL ;

EPLER, JE ;

PAOLI, TL .

APPLIED PHYSICS LETTERS, 1987, 50 (07) :392-394

[6]

GLASER AB, 1977, INTEGRATED CIRCUIT E

[7] DIFFUSION OF SILICON IN GALLIUM-ARSENIDE USING RAPID THERMAL-PROCESSING - EXPERIMENT AND MODEL [J].

GREINER, ME ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1984, 44 (08) :750-752

[8] A GAAS/ALGAAS DOUBLE-HETEROJUNCTION DEVICE FUNCTIONING AS A BIPOLAR-TRANSISTOR AND INJECTION-LASER FOR OPTOELECTRONIC INTEGRATED-CIRCUITS [J].

HASUMI, Y ;

KOZEN, A ;

TEMMYO, J ;

ASAHI, H .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (01) :10-12

[9] BIPOLAR-TRANSISTOR WITH GRADED BAND-GAP BASE [J].

HAYES, JR ;

CAPASSO, F ;

GOSSARD, AC ;

MALIK, RJ ;

WIEGMANN, W .

ELECTRONICS LETTERS, 1983, 19 (11) :410-411

[10] PHOTOLUMINESCENCE AND STIMULATED-EMISSION IN SI-DISORDERED AND GE-DISORDERED ALX GA1-X AS-GAAS SUPERLATTICES [J].

KALISKI, RW ;

GAVRILOVIC, P ;

MEEHAN, K ;

GAVRILOVIC, J ;

HSIEH, KC ;

JACKSON, GS ;

HOLONYAK, N ;

COLEMAN, JJ ;

BURNHAM, RD ;

THORNTON, RL ;

PAOLI, TL .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :101-107

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