PHOTOLUMINESCENCE AND STIMULATED-EMISSION IN SI-DISORDERED AND GE-DISORDERED ALX GA1-X AS-GAAS SUPERLATTICES

被引：22

作者：

KALISKI, RW

GAVRILOVIC, P

MEEHAN, K

GAVRILOVIC, J

HSIEH, KC

JACKSON, GS

HOLONYAK, N

COLEMAN, JJ

BURNHAM, RD

THORNTON, RL

PAOLI, TL

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 01期

关键词：

D O I：

10.1063/1.335710

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：101 / 107

页数：7

共 18 条

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[4]

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APPLIED PHYSICS LETTERS, 1985, 46 (09) :857-859

[6] DIFFUSION OF SILICON IN GALLIUM-ARSENIDE USING RAPID THERMAL-PROCESSING - EXPERIMENT AND MODEL [J].

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[7] IR-RED GAAS-ALAS SUPER-LATTICE LASER MONOLITHICALLY INTEGRATED IN A YELLOW-GAP CAVITY [J].

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[8]

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[9]

LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[10] DISORDER OF AN ALXGA1-XAS-GAAS SUPERLATTICE BY DONOR DIFFUSION [J].

MEEHAN, K ;

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BROWN, JM ;

NIXON, MA ;

GAVRILOVIC, P ;

BURNHAM, RD .

APPLIED PHYSICS LETTERS, 1984, 45 (05) :549-551

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