LASER TRANSITION TO BAND EDGE OR TO IMPURITY STATES IN GAAS-GE

被引：9

作者：

BURNHAM, RD

DAPKUS, PD

HOLONYAK, N

ROSSI, JA

机构：

[1] Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana

来源：

APPLIED PHYSICS LETTERS | 1969年 / 14卷 / 06期

关键词：

D O I：

10.1063/1.1652769

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented showing that p-type GaAs:Ge can be lased on band-to-band, conduction band-to-acceptor impurity, or simultaneously on both transitions. Recombination transitions to the Ge acceptor impurity are well separated in energy from those to the neighboring band edge, and in spectral width (spontaneous recombination) are in reasonable agreement with previous theory. © 1969 The American Institute of Physics.

引用

页码：190 / &

共 7 条

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ROSZTOCZY FE, 1968, B AM PHYS SOC, V13, P375

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