LASER TRANSITION AND PHOTON ENERGY OF GAAS IN LIGHTLY-DOPED LIMIT

被引：25

作者：

ROSSI, JA

HOLONYAK, N

DAPKUS, PD

WILLIAMS, FV

BURD, JW

机构：

来源：

关键词：

D O I：

10.1063/1.1652535

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：117 / &

共 11 条

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[8] RADIATIVE DECAY IN COMPOUND SEMICONDUCTORS
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[9] BAND-FILLING MODEL FOR GAAS INJECTION LUMINESCENCE
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