MANY-BODY WAVELENGTH SHIFT IN A SEMICONDUCTOR LASER

[1] BASOV NG, 1966, DOKL AKAD NAUK SSSR+, V168, P1283

[2] BASOV NG, 1966, SOV PHYS DOKL, V11, P522

[3] BONCHBRUEVICH VL, 1966, SEMIMETALS SEMICONDU, V1, P106

[4] LASER OPERATION OF CDSE PUMPED WITH A GA(ASP) LASER DIODE [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (08): : 1068 - &

[5] RADIATIVE DECAY IN COMPOUND SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (06) : 513 - +

[6] BAND-FILLING MODEL FOR GAAS INJECTION LUMINESCENCE [J]. APPLIED PHYSICS LETTERS, 1963, 2 (09) : 182 - 184

[7] PHOTOLUMINESCENCE OF COMPENSATED P-TYPE GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) : 2161 - &

[8] WILLARDSON RK, 1966, SEMICONDUCTORS SE ED, V1, P106

[1] BASOV NG, 1966, DOKL AKAD NAUK SSSR+, V168, P1283

[2] BASOV NG, 1966, SOV PHYS DOKL, V11, P522

[3] BONCHBRUEVICH VL, 1966, SEMIMETALS SEMICONDU, V1, P106

[4] LASER OPERATION OF CDSE PUMPED WITH A GA(ASP) LASER DIODE [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (08): : 1068 - &

[5] RADIATIVE DECAY IN COMPOUND SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (06) : 513 - +

[6] BAND-FILLING MODEL FOR GAAS INJECTION LUMINESCENCE [J]. APPLIED PHYSICS LETTERS, 1963, 2 (09) : 182 - 184

[7] PHOTOLUMINESCENCE OF COMPENSATED P-TYPE GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) : 2161 - &

[8] WILLARDSON RK, 1966, SEMICONDUCTORS SE ED, V1, P106