PHOTOLUMINESCENCE OF COMPENSATED P-TYPE GAAS

被引：31

作者：

TUCK, B

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1967年 / 28卷 / 11期

关键词：

D O I：

10.1016/0022-3697(67)90240-5

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：2161 / &

共 11 条

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[3]

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HERZOG, AH .

SOLID-STATE ELECTRONICS, 1966, 9 (07) :721-+

[5] EDGE ABSORPTION AND PHOTOLUMINESCENCE IN CLOSELY COMPENSATED GaAs [J].

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Schwarz, R. F. .

SOLID STATE COMMUNICATIONS, 1965, 3 (01) :9-13

[6]

MEYERHOFER D, 1960, P INT C SEMICONDUCTO, P958

[7] OPTICAL ABSORPTION EDGE IN GAAS AND ITS DEPENDENCE ON ELECTRIC FIELD [J].

MOSS, TS .

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[8]

NASLEDOV DN, 1964, P C PHYS SEMICOND PA, P853

[9] ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF GAAS AT 77 DEGREES K [J].

NATHAN, MI ;

BLUM, SE ;

BURNS, G ;

MARINACE, JC .

PHYSICAL REVIEW, 1963, 132 (04) :1482-&

[10] PHOTOLUMINESCENCE OF GAAS0.7P0.3 [J].

TUCK, B .

PHYSICA STATUS SOLIDI, 1966, 18 (02) :541-&

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