DISORDER OF AN ALXGA1-XAS-GAAS SUPERLATTICE BY DONOR DIFFUSION

被引：99

作者：

MEEHAN, K

HOLONYAK, N

BROWN, JM

NIXON, MA

GAVRILOVIC, P

BURNHAM, RD

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 05期

关键词：

D O I：

10.1063/1.95318

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：549 / 551

页数：3

共 12 条

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[2]

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[5]

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[6] X-RAY-DIFFRACTION STUDY OF INTER-DIFFUSION AND GROWTH IN (GAAS)N(AIAS)M MULTILAYERS [J].

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LOGAN, RA .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :357-363

[7] DIFFUSION OF SILICON IN GALLIUM-ARSENIDE USING RAPID THERMAL-PROCESSING - EXPERIMENT AND MODEL [J].

GREINER, ME ;

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APPLIED PHYSICS LETTERS, 1984, 44 (08) :750-752

[8] IR-RED GAAS-ALAS SUPER-LATTICE LASER MONOLITHICALLY INTEGRATED IN A YELLOW-GAP CAVITY [J].

HOLONYAK, N ;

LAIDIG, WD ;

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COLEMAN, JJ ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1981, 39 (01) :102-104

[9]

HOLONYAK N, 1983, Patent No. 4378255

[10]

LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

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