IMPURITY-INDUCED LAYER-DISORDERED BURIED HETEROSTRUCTURE ALX GA1-XAS-GAAS QUANTUM-WELL EDGE-INJECTION LASER ARRAY

被引：10

作者：

DEPPE, DG

JACKSON, GS

HOLONYAK, N

HALL, DC

BURNHAM, RD

THORNTON, RL

EPLER, JE

PAOLI, TL

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

关键词：

D O I：

10.1063/1.98209

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：392 / 394

页数：3

共 10 条

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[2] LOW-THRESHOLD DISORDER-DEFINED BURIED-HETEROSTRUCTURE ALXGA1-XAS-GAAS QUANTUM WELL LASERS
DEPPE, DG
HSIEH, KC
HOLONYAK, N
BURNHAM, RD
THORNTON, RL
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (12) : 4515 - 4520
[3] SINGLE-MODE SINGLE-LOBE OPERATION OF BROAD AREA ALX GA1-XAS-GAAS QUANTUM-WELL LASERS
DEPPE, DG
JACKSON, GS
HOLONYAK, N
HALL, DC
BURNHAM, RD
THORNTON, RL
EPLER, JE
PAOLI, TL
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (14) : 883 - 885
[4] DUPUIS RD, 1979, 7TH P INT S GAAS REL, P1
[5] PHOTOPUMPED LASER OPERATION OF ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES WITH SE AND MG SHEET DOPING
KALISKI, RW
HOLONYAK, N
HSIEH, KC
NAM, DW
BURNHAM, RD
EPLER, JE
THORNTON, RL
PAOLI, TL
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (20) : 1390 - 1392
[6] LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159
[7] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF III-V SEMICONDUCTORS
LUDOWISE, MJ
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (08) : R31 - R55
[8] DISORDER OF AN ALXGA1-XAS-GAAS SUPERLATTICE BY DONOR DIFFUSION
MEEHAN, K
HOLONYAK, N
BROWN, JM
NIXON, MA
GAVRILOVIC, P
BURNHAM, RD
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (05) : 549 - 551
[9] STRIPE-GEOMETRY ALXGA1-XAS-GAAS QUANTUM WELL HETEROSTRUCTURE LASERS DEFINED BY SI DIFFUSION AND DISORDERING
MEEHAN, K
GAVRILOVIC, P
HOLONYAK, N
BURNHAM, RD
THORNTON, RL
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (01) : 75 - 77
[10] THOMPSON GHB, 1980, PHYSICS SEMICONDUCTO, P296