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A GAAS/ALGAAS DOUBLE-HETEROJUNCTION DEVICE FUNCTIONING AS A BIPOLAR-TRANSISTOR AND INJECTION-LASER FOR OPTOELECTRONIC INTEGRATED-CIRCUITS
被引:12
作者
:
HASUMI, Y
论文数:
0
引用数:
0
h-index:
0
HASUMI, Y
KOZEN, A
论文数:
0
引用数:
0
h-index:
0
KOZEN, A
TEMMYO, J
论文数:
0
引用数:
0
h-index:
0
TEMMYO, J
ASAHI, H
论文数:
0
引用数:
0
h-index:
0
ASAHI, H
机构
:
来源
:
IEEE ELECTRON DEVICE LETTERS
|
1987年
/ 8卷
/ 01期
关键词
:
D O I
:
10.1109/EDL.1987.26533
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:10 / 12
页数:3
相关论文
共 14 条
[1]
ASACHI S, 1986, IEEE ELECTRON DEVICE, V7, P32
[2]
GAAS/(GA,AL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH BURIED OXYGEN-IMPLANTED ISOLATION LAYERS
ASBECK, PM
论文数:
0
引用数:
0
h-index:
0
ASBECK, PM
MILLER, DL
论文数:
0
引用数:
0
h-index:
0
MILLER, DL
ANDERSON, RJ
论文数:
0
引用数:
0
h-index:
0
ANDERSON, RJ
EISEN, FH
论文数:
0
引用数:
0
h-index:
0
EISEN, FH
[J].
IEEE ELECTRON DEVICE LETTERS,
1984,
5
(08)
: 310
-
312
[3]
HATA S, 1985, 17TH C SOL STAT DEV, P79
[4]
A MONOLITHIC INTEGRATION OF GAAS-GAAIAS BIPOLAR-TRANSISTOR AND HETEROSTRUCTURE LASER
KATZ, J
论文数:
0
引用数:
0
h-index:
0
KATZ, J
BARCHAIM, N
论文数:
0
引用数:
0
h-index:
0
BARCHAIM, N
CHEN, PC
论文数:
0
引用数:
0
h-index:
0
CHEN, PC
MARGALIT, S
论文数:
0
引用数:
0
h-index:
0
MARGALIT, S
URY, I
论文数:
0
引用数:
0
h-index:
0
URY, I
WILT, D
论文数:
0
引用数:
0
h-index:
0
WILT, D
YUST, M
论文数:
0
引用数:
0
h-index:
0
YUST, M
YARIV, A
论文数:
0
引用数:
0
h-index:
0
YARIV, A
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(02)
: 211
-
213
[5]
METALORGANIC VAPOR-PHASE-EPITAXIAL GROWTH OF MG-DOPED GA1-XALXAS LAYERS AND THEIR PROPERTIES
KOZEN, A
论文数:
0
引用数:
0
h-index:
0
KOZEN, A
NOJIMA, S
论文数:
0
引用数:
0
h-index:
0
NOJIMA, S
TENMYO, J
论文数:
0
引用数:
0
h-index:
0
TENMYO, J
ASAHI, H
论文数:
0
引用数:
0
h-index:
0
ASAHI, H
[J].
JOURNAL OF APPLIED PHYSICS,
1986,
59
(04)
: 1156
-
1159
[6]
HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS
KROEMER, H
论文数:
0
引用数:
0
h-index:
0
KROEMER, H
[J].
PROCEEDINGS OF THE IEEE,
1982,
70
(01)
: 13
-
25
[7]
MATSUEDA H, 1986, I PHYSICS C SERIES, V79, P655
[8]
NAGATA K, 1986, I PHYS C SER, V79, P589
[9]
TRANSVERSE-JUNCTION-STRIPE LASERS WITH A GAAS P-N HOMOJUNCTION
NAMIZAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,CENT RES LAB,ITAMI,HYOGO,JAPAN
MITSUBISHI ELECT CORP,CENT RES LAB,ITAMI,HYOGO,JAPAN
NAMIZAKI, H
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1975,
QE11
(07)
: 427
-
431
[10]
FACTORS INFLUENCING DOPING CONTROL AND ABRUPT METALLURGICAL TRANSITIONS DURING ATMOSPHERIC-PRESSURE MOVPE GROWTH OF ALGAAS AND GAAS
ROBERTS, JS
论文数:
0
引用数:
0
h-index:
0
机构:
CAMBRIDGE INSTRUMENTS LTD,CAMBRIDGE CB1 3QH,ENGLAND
CAMBRIDGE INSTRUMENTS LTD,CAMBRIDGE CB1 3QH,ENGLAND
ROBERTS, JS
MASON, NJ
论文数:
0
引用数:
0
h-index:
0
机构:
CAMBRIDGE INSTRUMENTS LTD,CAMBRIDGE CB1 3QH,ENGLAND
CAMBRIDGE INSTRUMENTS LTD,CAMBRIDGE CB1 3QH,ENGLAND
MASON, NJ
ROBINSON, M
论文数:
0
引用数:
0
h-index:
0
机构:
CAMBRIDGE INSTRUMENTS LTD,CAMBRIDGE CB1 3QH,ENGLAND
CAMBRIDGE INSTRUMENTS LTD,CAMBRIDGE CB1 3QH,ENGLAND
ROBINSON, M
[J].
JOURNAL OF CRYSTAL GROWTH,
1984,
68
(01)
: 422
-
430
←
1
2
→
共 14 条
[1]
ASACHI S, 1986, IEEE ELECTRON DEVICE, V7, P32
[2]
GAAS/(GA,AL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH BURIED OXYGEN-IMPLANTED ISOLATION LAYERS
ASBECK, PM
论文数:
0
引用数:
0
h-index:
0
ASBECK, PM
MILLER, DL
论文数:
0
引用数:
0
h-index:
0
MILLER, DL
ANDERSON, RJ
论文数:
0
引用数:
0
h-index:
0
ANDERSON, RJ
EISEN, FH
论文数:
0
引用数:
0
h-index:
0
EISEN, FH
[J].
IEEE ELECTRON DEVICE LETTERS,
1984,
5
(08)
: 310
-
312
[3]
HATA S, 1985, 17TH C SOL STAT DEV, P79
[4]
A MONOLITHIC INTEGRATION OF GAAS-GAAIAS BIPOLAR-TRANSISTOR AND HETEROSTRUCTURE LASER
KATZ, J
论文数:
0
引用数:
0
h-index:
0
KATZ, J
BARCHAIM, N
论文数:
0
引用数:
0
h-index:
0
BARCHAIM, N
CHEN, PC
论文数:
0
引用数:
0
h-index:
0
CHEN, PC
MARGALIT, S
论文数:
0
引用数:
0
h-index:
0
MARGALIT, S
URY, I
论文数:
0
引用数:
0
h-index:
0
URY, I
WILT, D
论文数:
0
引用数:
0
h-index:
0
WILT, D
YUST, M
论文数:
0
引用数:
0
h-index:
0
YUST, M
YARIV, A
论文数:
0
引用数:
0
h-index:
0
YARIV, A
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(02)
: 211
-
213
[5]
METALORGANIC VAPOR-PHASE-EPITAXIAL GROWTH OF MG-DOPED GA1-XALXAS LAYERS AND THEIR PROPERTIES
KOZEN, A
论文数:
0
引用数:
0
h-index:
0
KOZEN, A
NOJIMA, S
论文数:
0
引用数:
0
h-index:
0
NOJIMA, S
TENMYO, J
论文数:
0
引用数:
0
h-index:
0
TENMYO, J
ASAHI, H
论文数:
0
引用数:
0
h-index:
0
ASAHI, H
[J].
JOURNAL OF APPLIED PHYSICS,
1986,
59
(04)
: 1156
-
1159
[6]
HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS
KROEMER, H
论文数:
0
引用数:
0
h-index:
0
KROEMER, H
[J].
PROCEEDINGS OF THE IEEE,
1982,
70
(01)
: 13
-
25
[7]
MATSUEDA H, 1986, I PHYSICS C SERIES, V79, P655
[8]
NAGATA K, 1986, I PHYS C SER, V79, P589
[9]
TRANSVERSE-JUNCTION-STRIPE LASERS WITH A GAAS P-N HOMOJUNCTION
NAMIZAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,CENT RES LAB,ITAMI,HYOGO,JAPAN
MITSUBISHI ELECT CORP,CENT RES LAB,ITAMI,HYOGO,JAPAN
NAMIZAKI, H
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1975,
QE11
(07)
: 427
-
431
[10]
FACTORS INFLUENCING DOPING CONTROL AND ABRUPT METALLURGICAL TRANSITIONS DURING ATMOSPHERIC-PRESSURE MOVPE GROWTH OF ALGAAS AND GAAS
ROBERTS, JS
论文数:
0
引用数:
0
h-index:
0
机构:
CAMBRIDGE INSTRUMENTS LTD,CAMBRIDGE CB1 3QH,ENGLAND
CAMBRIDGE INSTRUMENTS LTD,CAMBRIDGE CB1 3QH,ENGLAND
ROBERTS, JS
MASON, NJ
论文数:
0
引用数:
0
h-index:
0
机构:
CAMBRIDGE INSTRUMENTS LTD,CAMBRIDGE CB1 3QH,ENGLAND
CAMBRIDGE INSTRUMENTS LTD,CAMBRIDGE CB1 3QH,ENGLAND
MASON, NJ
ROBINSON, M
论文数:
0
引用数:
0
h-index:
0
机构:
CAMBRIDGE INSTRUMENTS LTD,CAMBRIDGE CB1 3QH,ENGLAND
CAMBRIDGE INSTRUMENTS LTD,CAMBRIDGE CB1 3QH,ENGLAND
ROBINSON, M
[J].
JOURNAL OF CRYSTAL GROWTH,
1984,
68
(01)
: 422
-
430
←
1
2
→