BACKGROUND DOPING DEPENDENCE OF SILICON DIFFUSION IN P-TYPE GAAS

被引：59

作者：

DEPPE, DG ^{[1
]}

HOLONYAK, N ^{[1
]}

KISH, FA ^{[1
]}

BAKER, JE ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 15期

关键词：

D O I：

10.1063/1.97958

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：998 / 1000

页数：3

相关论文

共 13 条

[1] DIFFUSION OF SILICON IN GALLIUM ARSENIDE
ANTELL, GR
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (12) : 943 - &
[2] SATURATION OF SI ACTIVATION AT HIGH DOPING LEVELS IN GAAS
BANWELL, TC
MAENPAA, M
NICOLET, MA
TANDON, JL
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1983, 44 (06) : 507 - 514
[3] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS
BARAFF, GA
SCHLUTER, M
[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (12) : 1327 - 1330
[4] CASEY HC, 1973, ATOMIC DIFFUSION SEM, P422
[5] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS
CHIANG, SY
PEARSON, GL
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 2986 - 2991
[6] DISORDER OF AN ALAS-GAAS SUPER-LATTICE BY SILICON IMPLANTATION
COLEMAN, JJ
DAPKUS, PD
KIRKPATRICK, CG
CAMRAS, MD
HOLONYAK, N
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 904 - 906
[7] DEPPE DG, UNPUB
[8] DIFFUSION OF SILICON IN GALLIUM-ARSENIDE USING RAPID THERMAL-PROCESSING - EXPERIMENT AND MODEL
GREINER, ME
GIBBONS, JF
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 750 - 752
[9] SILICON DIFFUSION AT POLYCRYSTALLINE-SI/GAAS INTERFACES
KAVANAGH, KL
MAYER, JW
MAGEE, CW
SHEETS, J
TONG, J
WOODALL, JM
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (11) : 1208 - 1210
[10] EFFECTS OF BE AND SI ON DISORDERING OF THE ALAS/GAAS SUPERLATTICE
KAWABE, M
SHIMIZU, N
HASEGAWA, F
NANNICHI, Y
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (09) : 849 - 850