DEMONSTRATION AND PROPERTIES OF A PLANAR HETEROJUNCTION BIPOLAR-TRANSISTOR WITH LATERAL CURRENT FLOW

被引:10
作者
THORNTON, RL
MOSBY, WJ
CHUNG, HF
机构
关键词
D O I
10.1109/16.40895
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:2156 / 2164
页数:9
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[21]   DISORDERING OF GA1-XALXAS-GAAS QUANTUM WELL STRUCTURES BY DONOR SULFUR DIFFUSION [J].
RAO, EVK ;
THIBIERGE, H ;
BRILLOUET, F ;
ALEXANDRE, F ;
AZOULAY, R .
APPLIED PHYSICS LETTERS, 1985, 46 (09) :867-869
[22]   MONOLITHIC INTEGRATION OF AN ALGAAS/GAAS MULTIQUANTUM WELL LASER AND GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS ON A SEMI-INSULATING GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J].
SANADA, T ;
YAMAKOSHI, S ;
WADA, O ;
FUJII, T ;
SAKURAI, T ;
SASAKI, M .
APPLIED PHYSICS LETTERS, 1984, 44 (03) :325-327
[23]   MONOLITHIC INTEGRATION OF AN INGAASP/INP LASER DIODE WITH HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
SHIBATA, J ;
NAKAO, I ;
SASAI, Y ;
KIMURA, S ;
HASE, N ;
SERIZAWA, H .
APPLIED PHYSICS LETTERS, 1984, 45 (03) :191-193
[24]   AN INGAASP/INP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR FOR MONOLITHIC INTEGRATION WITH A 1.5-MU-M LASER DIODE [J].
SU, LM ;
GROTE, N ;
KAUMANNS, R ;
KATZSCHNER, W ;
BACH, HG .
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (01) :14-17
[25]   HIGH-POWER (2.1 W) 10-STRIPE ALGAAS LASER ARRAYS WITH SI DISORDERED FACET WINDOWS [J].
THORNTON, RL ;
WELCH, DF ;
BURNHAM, RD ;
PAOLI, TL ;
CROSS, PS .
APPLIED PHYSICS LETTERS, 1986, 49 (23) :1572-1574
[26]   OPTOELECTRONIC DEVICE STRUCTURES FABRICATED BY IMPURITY INDUCED DISORDERING [J].
THORNTON, RL ;
BURNHAM, RD ;
PAOLI, TL ;
HOLONYAK, N ;
DEPPE, DG .
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :621-628
[27]   LOW THRESHOLD PLANAR BURIED HETEROSTRUCTURE LASERS FABRICATED BY IMPURITY-INDUCED DISORDERING [J].
THORNTON, RL ;
BURNHAM, RD ;
PAOLI, TL ;
HOLONYAK, N ;
DEPPE, DG .
APPLIED PHYSICS LETTERS, 1985, 47 (12) :1239-1241
[28]   MONOLITHIC WAVE-GUIDE COUPLED CAVITY LASERS AND MODULATORS FABRICATED BY IMPURITY INDUCED DISORDERING [J].
THORNTON, RL ;
MOSBY, WJ ;
PAOLI, TL .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1988, 6 (06) :786-792
[29]   TRANSVERSE JUNCTION STRIPE LASER WITH A LATERAL HETEROBARRIER BY DIFFUSION ENHANCED ALLOY DISORDERING [J].
YANG, YJ ;
LO, YC ;
LEE, GS ;
HSIEH, KY ;
KOLBAS, RM .
APPLIED PHYSICS LETTERS, 1986, 49 (14) :835-837
[30]   EMITTER BASE BANDGAP GRADING EFFECTS ON GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR CHARACTERISTICS [J].
YOSHIDA, J ;
KURATA, M ;
MORIZUKA, K ;
HOJO, A .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) :1714-1721