HETEROJUNCTION BIPOLAR-TRANSISTORS FOR MICROWAVE AND MILLIMETER-WAVE INTEGRATED-CIRCUITS

[1] AGARWAL K, 1986 MTT S, P95

[2] ASBECK PM, 1984, IEDM, P846

[3] BAYRAKTAROGLU B, 1987 IEEE MTT S, P969

[4] ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED USING A SELF-ALIGNED DUAL-LIFT-OFF PROCESS [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) : 303 - 305

[5] GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS USING A SELF-ALIGNED SUBSTITUTIONAL EMITTER PROCESS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) : 8 - 10

[6] CHOUDHURY ANMM, 1984, IEEE ELECTR DEVICE L, V5, P251, DOI 10.1109/EDL.1984.25907

[7] DEGRAAF K, 1986 GAAS IC S, P205

[8] HIGH-PERFORMANCE P-N-P ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS - A THEORETICAL-ANALYSIS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) : 108 - 111

[9] ISHIBASHI T, 1987 DEV RES C

[10] ITO H, 1985, I PHYS C SER, V79, P607

[1] AGARWAL K, 1986 MTT S, P95

[2] ASBECK PM, 1984, IEDM, P846

[3] BAYRAKTAROGLU B, 1987 IEEE MTT S, P969

[4] ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED USING A SELF-ALIGNED DUAL-LIFT-OFF PROCESS [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) : 303 - 305

[5] GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS USING A SELF-ALIGNED SUBSTITUTIONAL EMITTER PROCESS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) : 8 - 10

[6] CHOUDHURY ANMM, 1984, IEEE ELECTR DEVICE L, V5, P251, DOI 10.1109/EDL.1984.25907

[7] DEGRAAF K, 1986 GAAS IC S, P205

[8] HIGH-PERFORMANCE P-N-P ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS - A THEORETICAL-ANALYSIS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) : 108 - 111

[9] ISHIBASHI T, 1987 DEV RES C

[10] ITO H, 1985, I PHYS C SER, V79, P607