A NEW OPTOELECTRONIC DEVICE BASED ON MODULATION-DOPED HETEROSTRUCTURE - DEMONSTRATION OF FUNCTIONS AS BOTH LATERAL CURRENT INJECTION-LASER AND JUNCTION FIELD-EFFECT TRANSISTOR

被引：6

作者：

HONDA, Y

SUEMUNE, I

YASUHIRA, N

YAMANISHI, M

机构：

[1] Department of Physical Electronics, Faculty of Engineering, Hiroshima University

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 12期

关键词：

D O I：

10.1109/68.62017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new type of optoelectronic semiconductor device which utilizes the modulation-doped (MOD) heterostructuer is demonstrated. The device operates as not only a lateral current injection (LCI) laser but also as a junction field effect transistor (J-FET) based on the MOD heterostructure. This first demonstration of the structural compatibility of the LCI laser with the MOD-FET's will be the one step towards the optoelectronic integration which utilizes the common two-dimensional electron gas.

引用

页码：881 / 883

页数：3

共 9 条

[1] THEORY OF GAIN, MODULATION RESPONSE, AND SPECTRAL LINEWIDTH IN ALGAAS QUANTUM WELL LASERS [J].