CW OPERATION AND EXTREMELY LOW CAPACITANCE OF TJ-BH MQW LASER-DIODES FABRICATED BY ENTIRE MOVPE

被引：12

作者：

SHIMOYAMA, K ^{[1
]}

KATOH, M ^{[1
]}

SUZUKI, Y ^{[1
]}

SATOH, T ^{[1
]}

INOUE, Y ^{[1
]}

NAGAO, S ^{[1
]}

GOTOH, H ^{[1
]}

机构：

[1] ELECTROTECH LAB, TSUKUBA, IBARAKI 305, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 12期

关键词：

D O I：

10.1143/JJAP.27.L2417

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L2417 / L2419

页数：3

共 9 条

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[9] GAAS-GA1-XALXAS BURIED-HETEROSTRUCTURE INJECTION LASERS [J].

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