ALGAAS/GAAS SELF-ALIGNED LDS FABRICATED BY THE PROCESS CONTAINING VAPOR-PHASE ETCHING AND SUBSEQUENT MOVPE REGROWTH

被引：26

作者：

NIDO, M ^{[1
]}

KOMAZAKI, I ^{[1
]}

KOBAYASHI, K ^{[1
]}

ENDO, K ^{[1
]}

UENO, M ^{[1
]}

KAMEJIMA, T ^{[1
]}

SUZUKI, T ^{[1
]}

机构：

[1] NEC CORP,ENVIRONM PROTECT RES LABS,KAWASAKI,KANAGAWA 213,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1987年 / 23卷 / 06期

关键词：

D O I：

10.1109/JQE.1987.1073412

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：720 / 724

页数：5

共 12 条

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