INVESTIGATIONS ON THE HCL GAS-PHASE ETCHING OF DIFFERENTLY DOPED AND ORIENTED GAAS CRYSTALS

被引：8

作者：

DORSHCHAND, S

DAWERITZ, L

BERGER, H

机构：

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1983年 / 18卷 / 11期

关键词：

D O I：

10.1002/crat.2170181109

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

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页码：1359 / 1368

页数：10

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