VAPOR-PHASE ETCHING OF GAAS IN A CHLORINE SYSTEM

被引：23

作者：

HEYEN, M

BALK, P

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 53卷 / 03期

关键词：

D O I：

10.1016/0022-0248(81)90139-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：558 / 562

页数：5

共 12 条

[1]

BAKIN NN, 1972, INORG MATER, V8, P1206

[2] VAPOR-PHASE ETCHING AND POLISHING OF GAAS USING ARSENIC-TRICHLORIDE [J].

BHAT, R ;

GHANDHI, SK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (09) :1447-1448

[3] VAPOR-PHASE ETCHING AND POLISHING OF GALLIUM-ARSENIDE USING HYDROGEN-CHLORIDE GAS [J].

BHAT, R ;

BALIGA, BJ ;

GHANDHI, SK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) :1378-1382

[4]

DILORENZO JV, 1975, I PHYS C SER, V24, P362

[5] EPITAXIAL GROWTH OF DOPED AND PURE GAAS IN AN OPEN FLOW SYSTEM [J].

EFFER, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) :1020-&

[6] SUBMICRON EPITAXIAL FILMS FOR GAAS FIELD-EFFECT TRANSISTORS [J].

FAIRMAN, RD ;

SOLOMON, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (04) :541-544

[7]

JIDA S, 1965, JAPAN J APPL PHYS, V4, P1025

[8] REACTION EQUILIBRIA IN GROWTH OF GAAS AND GAP BY CHLORIDE TRANSPORT PROCESS [J].

KIRWAN, DJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (12) :1572-&

[9] NEW GAS ETCHING METHOD FOR VAPOR GROWTH OF GAAS [J].

NOZAKI, T ;

SAITO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (01) :110-&

[10] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL GAAS1-XPX USING ARSINE AND PHOSPHINE [J].

TIETJEN, JJ ;

AMICK, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) :724-&

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