TRANSVERSE JUNCTION BURIED HETEROSTRUCTURE (TJ-BH) ALGAAS DIODE-LASER

被引：12

作者：

SUZUKI, Y

MUKAI, S

YAJIMA, H

SATO, T

机构：

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 08期

关键词：

D O I：

10.1049/el:19870281

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：384 / 386

页数：3

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