UNIFIED PLANAR PROCESS FOR FABRICATING HETEROJUNCTION BIPOLAR-TRANSISTORS AND BURIED-HETEROSTRUCTURE LASERS UTILIZING IMPURITY-INDUCED DISORDERING

被引：16

作者：

THORNTON, RL

MOSBY, WJ

CHUNG, HF

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 26期

关键词：

D O I：

10.1063/1.100192

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2669 / 2671

页数：3

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[7] LOW THRESHOLD PLANAR BURIED HETEROSTRUCTURE LASERS FABRICATED BY IMPURITY-INDUCED DISORDERING
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