A NEW SELECTIVE MOVPE REGROWTH PROCESS UTILIZING INSITU VAPOR-PHASE ETCHING FOR OPTOELECTRONIC INTEGRATED-CIRCUITS

被引：25

作者：

SHIMOYAMA, K ^{[1
]}

INOUE, Y ^{[1
]}

KATOH, M ^{[1
]}

GOTOH, H ^{[1
]}

SUZUKI, Y ^{[1
]}

YAJIMA, H ^{[1
]}

机构：

[1] ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90555-J

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We describe a new selective MOVPE regrowth technique combined with an in-situ vapor phase mesa-etching process and its application for the fabrication of transverse-junction buried hetero-structures. This new technique is very useful in obtaining a clean regrowth interface even if the regrowth is on AlGaAs. We have demonstrated an optoelectronic AlGaAs/GaAs hetero-transverse-junction semiconductor device fabricated by this regrowth process. The device operates as not only a laser with a threshold current of 19 mA at room temperature but also as a junction field effect transistor with a transconductance of 120 mS/mm (6.0-mu-m wide active region and 200-mu-m long cavity).

引用

页码：767 / 771

页数：5

共 6 条

[1] ALGAAS/GAAS LATERAL CURRENT INJECTION (LCI)-MQW LASER USING IMPURITY-INDUCED DISORDERING [J].