NOVEL BURIED HETEROSTRUCTURE LASER TRIODE FOR MONOLITHIC INTEGRATION

被引：6

作者：

SHIMOYAMA, K ^{[1
]}

INOUE, Y ^{[1
]}

KATOH, M ^{[1
]}

GOTOH, H ^{[1
]}

SUZUKI, Y ^{[1
]}

YAJIMA, H ^{[1
]}

机构：

[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 16期

关键词：

D O I：

10.1049/el:19890733

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1096 / 1097

页数：2

共 6 条

[1] ALGAAS/GAAS LATERAL CURRENT INJECTION (LCI)-MQW LASER USING IMPURITY-INDUCED DISORDERING [J].

FURUYA, A ;

MAKIUCHI, M ;

WADA, O ;

FUJII, T ;

NOBUHARA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (02) :L134-L135

[2] ALGAAS/GAAS SELF-ALIGNED LDS FABRICATED BY THE PROCESS CONTAINING VAPOR-PHASE ETCHING AND SUBSEQUENT MOVPE REGROWTH [J].

NIDO, M ;

KOMAZAKI, I ;

KOBAYASHI, K ;

ENDO, K ;

UENO, M ;

KAMEJIMA, T ;

SUZUKI, T .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) :720-724

[3] BURIED TRANSVERSE-JUNCTION STRIPE LASER FOR OPTOELECTRONIC-INTEGRATED CIRCUITS [J].

OHTA, J ;

KURODA, K ;

MITSUNAGA, K ;

KYUMA, K ;

HAMANAKA, K ;

NAKAYAMA, T .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (10) :4933-4935

[4] CW OPERATION AND EXTREMELY LOW CAPACITANCE OF TJ-BH MQW LASER-DIODES FABRICATED BY ENTIRE MOVPE [J].

SHIMOYAMA, K ;

KATOH, M ;

SUZUKI, Y ;

SATOH, T ;

INOUE, Y ;

NAGAO, S ;

GOTOH, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12) :L2417-L2419

[5] TRANSVERSE JUNCTION BURIED HETEROSTRUCTURE (TJ-BH) LASER DIODE GROWN BY MOVPE [J].

SHIMOYAMA, K ;

KATOH, M ;

NOGUCHI, M ;

INOUE, Y ;

GOTOH, H ;

SUZUKI, Y ;

SATOH, T .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :803-808

[6] TRANSVERSE JUNCTION BURIED HETEROSTRUCTURE (TJ-BH) ALGAAS DIODE-LASER [J].

SUZUKI, Y ;

MUKAI, S ;

YAJIMA, H ;

SATO, T .

ELECTRONICS LETTERS, 1987, 23 (08) :384-386

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