OPERATION PRINCIPLE OF THE INGAASP/INP LASER TRANSISTOR

被引：28

作者：

MORI, Y

SHIBATA, J

SASAI, Y

SERIZAWA, H

KAJIWARA, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 07期

关键词：

D O I：

10.1063/1.96045

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：649 / 651

页数：3

共 8 条

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[2]

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[3]

MORI Y, 1984, 16TH 1984 INT C SOL, P18

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UMENO, M .

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[5] MONOLITHIC INTEGRATION OF AN INGAASP/INP LASER DIODE WITH HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

SHIBATA, J ;

NAKAO, I ;

SASAI, Y ;

KIMURA, S ;

HASE, N ;

SERIZAWA, H .

APPLIED PHYSICS LETTERS, 1984, 45 (03) :191-193

[6] FUNDAMENTAL CHARACTERISTICS OF AN INGAASP/INP LASER TRANSISTOR [J].

SHIBATA, J ;

MORI, Y ;

SASAI, Y ;

HASE, N ;

SERIZAWA, H ;

KAJIWARA, T .

ELECTRONICS LETTERS, 1985, 21 (03) :98-100

[7]

SHIBATA J, 1984, 16TH INT C SOL STAT, P129

[8] DOUBLE HETEROJUNCTION ALXGA1-XAS/GAAS BIPOLAR-TRANSISTORS (DHBJTS) BY MBE WITH A CURRENT GAIN OF 1650 [J].

SU, SL ;

TEJAYADI, O ;

DRUMMOND, TJ ;

FISCHER, R ;

MORKOC, H .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (05) :130-132

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