FUNDAMENTAL CHARACTERISTICS OF AN INGAASP/INP LASER TRANSISTOR

被引：28

作者：

SHIBATA, J

MORI, Y

SASAI, Y

HASE, N

SERIZAWA, H

KAJIWARA, T

机构：

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 03期

关键词：

D O I：

10.1049/el:19850068

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：98 / 100

页数：3

共 8 条

[1]

ARAI Y, 1984, 1984 IECE JAP NAT C, P2

[2] OXIDE DEFINED TJS']JS LASERS IN INGAASP-INP DH-STRUCTURES [J].

BULL, DJ ;

PATEL, NB ;

PRINCE, FC ;

NANNICHI, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) :710-713

[3]

Matsueda H., 1983, Journal of Lightwave Technology, VLT-1, P261, DOI 10.1109/JLT.1983.1072064

[4]

MORI Y, 1984, 16TH 1984 INT C SOL, P18

[5] DUAL WAVELENGTH INGAASP INP TJS']JS LASERS [J].

SAKAI, S ;

AOKI, T ;

UMENO, M .

ELECTRONICS LETTERS, 1982, 18 (01) :18-20

[6] MONOLITHIC INTEGRATION OF AN INGAASP/INP LASER DIODE WITH HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

SHIBATA, J ;

NAKAO, I ;

SASAI, Y ;

KIMURA, S ;

HASE, N ;

SERIZAWA, H .

APPLIED PHYSICS LETTERS, 1984, 45 (03) :191-193

[7]

SHIBATA J, 1984, 16TH INT C SOL STAT, P129

[8]

Sze S.M, 1981, PHYS SEMICONDUCTOR D, P135

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