OXIDE DEFINED TJS']JS LASERS IN INGAASP-INP DH-STRUCTURES

被引：6

作者：

BULL, DJ

PATEL, NB

PRINCE, FC

NANNICHI, Y

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1979年 / 15卷 / 08期

关键词：

D O I：

10.1109/JQE.1979.1070083

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：710 / 713

页数：4

共 7 条

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PANISH, MB ;

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PAOLI, TL .

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[2] DIFFUSION AND SOLUBILITY OF ZINC IN INDIUM PHOSPHIDE [J].

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CASEY, HC .

SOLID-STATE ELECTRONICS, 1964, 7 (06) :481-&

[3]

KIRKBY PA, 1978 IEEE INT SEM LA

[4] HIGH-TEMPERATURE SINGLE-MODE CW OPERATION WITH A JUNCTION-UP TJS']JS-LASER [J].

KUMABE, H ;

TANAKA, T ;

NAMIZAKI, H ;

ISHII, M ;

SUSAKI, W .

APPLIED PHYSICS LETTERS, 1978, 33 (01) :38-39

[5] TRANSVERSE-JUNCTION-STRIPE LASERS WITH A GAAS P-N HOMOJUNCTION [J].

NAMIZAKI, H .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :427-431

[6]

NAMIZAKI H, 1974, J APPL PHYS, V45, P2785, DOI 10.1063/1.1663670

[7] LIQUID-PHASE EPITAXIAL IN1-XGAXASYP1-Y LATTICE MATCHED TO (100) INP OVER COMPLETE WAVELENGTH RANGE 0.92 GREATER-THAN-LAMBDA-EQUAL-TO-1.65 MU-M [J].

POLLACK, MA ;

NAHORY, RE ;

DEWINTER, JC ;

BALLMAN, AA .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :314-316

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