VERTICAL INTEGRATION OF AN IN0.15GA0.85AS MODULATION-DOPED FIELD-EFFECT TRANSISTOR AND GAAS-LASER GROWN BY MOLECULAR-BEAM EPITAXY

被引：9

作者：

OFFSEY, SD ^{[1
]}

TASKER, PJ ^{[1
]}

SCHAFF, WJ ^{[1
]}

KAPITAN, L ^{[1
]}

SHEALY, JR ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 06期

关键词：

Epitaxy and epitaxial growth; Field effect transistors; Lasers and laser applications; Semiconductor devices and materials;

D O I：

10.1049/el:19900228

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A vertically integrated structure consisting of an In0.15Ga0.85As pseudomorphic modulation doped field effect transistor (MODFET) and a GaAs graded index separate confinement heterostructure single quantum well (GRINSCH SQW) laser was grown by molecular beam epitaxy. Wafers containing integrated MODFET/laser layers produced MODFETs with DC and microwave performance comparable to wafers containing only MODFET layers, indicating that the modulation doping and the strained In0.15Ga0.85As channel were largely unaffected by the long, high temperature laser growth. The lasers had threshold currents similar to identical structures grown on n-type substrates and the integrated structures had a 3dB modulation bandwidth of 3.5 GHz. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：350 / 352

页数：3

共 10 条

[1]

Nguyen L. D., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P176, DOI 10.1109/IEDM.1988.32783

[2]

OFFSEY S, PHOTONICS TECH LETT, V2

[3] STRAINED-LAYER INGAAS-GAAS-ALGAAS GRADED-INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE SINGLE QUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].