HIGH-SPEED OPERATION OF 1.5-MU-M GAINASP INP OPTOELECTRONIC INTEGRATED LASER DRIVERS

被引：11

作者：

SUZUKI, N

FURUYAMA, H

HIRAYAMA, Y

MORINAGA, M

EGUCHI, K

KUSHIBE, M

FUNAMIZU, M

NAKAMURA, M

机构：

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 08期

关键词：

D O I：

10.1049/el:19880316

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：467 / 468

页数：2

共 5 条

[1] HIGH-SPEED INGAASP CONSTRICTED-MESA LASERS [J].

BOWERS, JE ;

HEMENWAY, BR ;

GNAUCK, AH ;

WILT, DP .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (06) :833-844

[2] MONOLITHICALLY INTEGRATED HIGH-SPEED LIGHT-SOURCE USING 1.3-MU-M WAVELENGTH DFB-DC-PBH LASER [J].

KASAHARA, K ;

TERAKADO, T ;

SUZUKI, A ;

MURATA, S .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1986, 4 (07) :908-912

[3] THE SUPERIORITY OF OPTOELECTRONIC INTEGRATION FOR HIGH-SPEED LASER DIODE MODULATION [J].

NAKAMURA, M ;

SUZUKI, N ;

OZEKI, T .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (06) :822-826

[4] FREQUENCY-RESPONSE OF AN INGAASP VAPOR-PHASE REGROWN BURIED HETEROSTRUCTURE LASER WITH 18 GHZ BANDWIDTH [J].

OLSHANSKY, R ;

LANZISERA, V ;

SU, CB ;

POWAZINIK, W ;

LAUER, RB .

APPLIED PHYSICS LETTERS, 1986, 49 (03) :128-130

[5] SCHOTTKY CONTACTS ON N-INP SURFACE TREATED BY PLASMA-INDUCED OXYGEN RADICALS [J].

YAMAGISHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (11) :1691-1696

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