FREQUENCY-RESPONSE OF AN INGAASP VAPOR-PHASE REGROWN BURIED HETEROSTRUCTURE LASER WITH 18 GHZ BANDWIDTH

被引：28

作者：

OLSHANSKY, R

LANZISERA, V

SU, CB

POWAZINIK, W

LAUER, RB

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 03期

关键词：

D O I：

10.1063/1.97620

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：128 / 130

页数：3

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[4] EFFECT OF NONLINEAR GAIN ON THE BANDWIDTH OF SEMICONDUCTOR-LASERS
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[5] SCHLAFER J, 1985, ELECTRON LETT, V21, P11
[6] 15-GHZ DIRECT MODULATION BANDWIDTH OF VAPOR-PHASE REGROWN 1.3 MU-M INGAASP BURIED-HETEROSTRUCTURE LASERS UNDER CW OPERATION AT ROOM-TEMPERATURE
SU, CB
LANZISERA, V
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[J]. ELECTRONICS LETTERS, 1985, 21 (13) : 577 - 579
[7] TUCKER RS, 1985, J LIGHTWAVE TECHNOL, V3, P1180