EFFECT OF NONLINEAR GAIN ON THE BANDWIDTH OF SEMICONDUCTOR-LASERS

被引：31

作者：

OLSHANSKY, R

FYE, DM

MANNING, J

SU, CB

机构：

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 17期

关键词：

D O I：

10.1049/el:19850509

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：721 / 722

页数：2

共 10 条

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BRIDGES, TJ ;

BURKHARDT, EG .

ELECTRONICS LETTERS, 1985, 21 (09) :392-393

[2]

BOWERS JE, 1985, MAY C LAS EL BALT

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[4] MECHANISM OF ASYMMETRIC LONGITUDINAL MODE COMPETITION IN INGAASP/INP LASERS [J].

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APPLIED PHYSICS LETTERS, 1982, 40 (07) :553-555

[5] 11-GHZ DIRECT MODULATION BANDWIDTH GAAIAS WINDOW LASER ON SEMIINSULATING SUBSTRATE OPERATING AT ROOM-TEMPERATURE [J].

LAU, KY ;

BARCHAIM, N ;

URY, I ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :316-318

[6] FABRICATION, CHARACTERIZATION, AND ANALYSIS OF MASS-TRANSPORTED GAINASP INP BURIED-HETEROSTRUCTURE LASERS [J].

LIAU, ZL ;

WALPOLE, JN ;

TSANG, DZ .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (08) :855-865

[7] STRONG INFLUENCE OF NONLINEAR GAIN ON SPECTRAL AND DYNAMIC CHARACTERISTICS OF INGAASP LASERS [J].

MANNING, J ;

OLSHANSKY, R ;

FYE, DM ;

POWAZINIK, W .

ELECTRONICS LETTERS, 1985, 21 (11) :496-497

[8] 15-GHZ DIRECT MODULATION BANDWIDTH OF VAPOR-PHASE REGROWN 1.3 MU-M INGAASP BURIED-HETEROSTRUCTURE LASERS UNDER CW OPERATION AT ROOM-TEMPERATURE [J].

SU, CB ;

LANZISERA, V ;

OLSHANSKY, R ;

POWAZINIK, W ;

MELAND, E ;

SCHLAFER, J ;

LAUER, RB .

ELECTRONICS LETTERS, 1985, 21 (13) :577-579

[9] EFFECT OF DOPING LEVEL ON THE GAIN CONSTANT AND MODULATION BANDWIDTH OF INGAASP SEMICONDUCTOR-LASERS [J].

SU, CB ;

LANZISERA, V .

APPLIED PHYSICS LETTERS, 1984, 45 (12) :1302-1304

[10]

TUCKER RS, 1984, IEEE OSA J LIGHTW LT, V2, P385

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