EFFECT OF DOPING LEVEL ON THE GAIN CONSTANT AND MODULATION BANDWIDTH OF INGAASP SEMICONDUCTOR-LASERS

被引：60

作者：

SU, CB

LANZISERA, V

机构：

[1] GTE Lab, Optoelectronic Devices Dep,, Waltham, MA, USA, GTE Lab, Optoelectronic Devices Dep, Waltham, MA, USA

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 12期

关键词：

SEMICONDUCTING INDIUM COMPOUNDS;

D O I：

10.1063/1.95127

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using the threshold carrier density measurement technique, the differential gain dg/dn at lasing threshold was measured. It was found that the differential gain dg/dn of 1. 3- mu m InGaAsP lasers is a strong function of the active layer doping level P//0. At a doping level of 2. 5 multiplied by 10**1**8cm** minus **3, the differential gain is several times larger than at 4 multiplied by 10**1**7cm** minus **3. A factor of 2 increase in the modulation bandwidth is demonstrated using the dg/dn dependency on P//0.

引用

页码：1302 / 1304

页数：3

共 9 条

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[J]. APPLIED PHYSICS LETTERS, 1983, 43 (01) : 1 - 3
[2] LIU PL, 1984, APPL PHYS LETT, V44, P730
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[4] CALCULATED AUGER RATES AND TEMPERATURE-DEPENDENCE OF THRESHOLD FOR SEMICONDUCTOR-LASERS EMITTING AT 1.3 AND 1.55-MU-M
NELSON, RJ
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OLSHANSKY, R
SU, CB
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[7] MEASUREMENTS OF THRESHOLD CARRIER DENSITY OF III-V SEMICONDUCTOR-LASER DIODES
SU, CB
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[J]. APPLIED PHYSICS LETTERS, 1983, 43 (09) : 856 - 858
[8] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN III-V SEMICONDUCTOR-LASERS - EXPERIMENTAL PREDICTION AND EXPLANATION
SU, CB
OLSHANSKY, R
MANNING, J
POWAZINIK, W
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (11) : 1030 - 1032
[9] CARRIER LIFETIME MEASUREMENT FOR DETERMINATION OF RECOMBINATION RATES AND DOPING LEVELS OF III-V SEMICONDUCTOR LIGHT-SOURCES
SU, CB
OLSHANSKY, R
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (09) : 833 - 835

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