THRESHOLD TEMPERATURE-DEPENDENCE OF SUBNANOSECOND OPTICALLY-EXCITED 1.3-MU-M INGAASP LASERS

被引:8
作者
MARTINEZ, OE [1 ]
HERITAGE, JP [1 ]
MILLER, BI [1 ]
DUTTA, NK [1 ]
NELSON, RJ [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
关键词
D O I
10.1063/1.94846
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:578 / 580
页数:3
相关论文
共 19 条
[1]   THE TEMPERATURE-DEPENDENCE OF THE EFFICIENCY AND THRESHOLD CURRENT OF IN1-XGAXASYP1-Y LASERS RELATED TO INTERVALENCE BAND ABSORPTION [J].
ADAMS, AR ;
ASADA, M ;
SUEMATSU, Y ;
ARAI, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) :L621-L624
[2]  
Casey H.C, 1978, HETEROSTRUCTURE LASE, P173
[3]   EVALUATION OF INGAASP LASER MATERIAL BY OPTICAL-PUMPING [J].
CHRAPLYVY, AR ;
KAMINOW, IP ;
DENTAI, AG .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (09) :1342-1344
[4]   GAIN-CURRENT RELATION FOR INO.72GAO.28ASO.6PO.4 LASERS [J].
DUTTA, NK .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) :55-60
[5]   TEMPERATURE-DEPENDENCE OF THE LASING CHARACTERISTICS OF THE 1.3-MU-M INGAASP-INP AND GAAS-AL0.36GA0.64AS DH LASERS [J].
DUTTA, NK ;
NELSON, RJ .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (05) :871-878
[6]  
DUTTA NK, 1981, APPL PHYS LETT, V38, P407, DOI 10.1063/1.92380
[7]   INGAASP LASER WITH HIGH TO [J].
DUTTA, NK ;
WRIGHT, PD ;
NELSON, RJ ;
WILSON, RB ;
BESOMI, PR .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (10) :1414-1416
[8]   THE CASE FOR AUGER RECOMBINATION IN IN1-XGAXASYP1-Y [J].
DUTTA, NK ;
NELSON, RJ .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :74-92
[9]   INFLUENCE OF HOT CARRIERS ON THE TEMPERATURE-DEPENDENCE OF THRESHOLD IN 1.3-MU-M INGAASP LASERS [J].
ETIENNE, B ;
SHAH, J ;
LEHENY, RF ;
NAHORY, RE .
APPLIED PHYSICS LETTERS, 1982, 41 (11) :1018-1020
[10]   TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR DOUBLE-HETEROJUNCTION LASERS [J].
ETTENBERG, M ;
NUESE, CJ ;
KRESSEL, H .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) :2949-2950