EVALUATION OF INGAASP LASER MATERIAL BY OPTICAL-PUMPING

被引：3

作者：

CHRAPLYVY, AR

KAMINOW, IP

DENTAI, AG

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1983年 / 19卷 / 09期

关键词：

D O I：

10.1109/JQE.1983.1072039

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1342 / 1344

页数：3

共 6 条

[1] OPTICAL-PROPERTIES OF IN1-XGAXP1-YASY, INP, GAAS, AND GAP DETERMINED BY ELLIPSOMETRY [J].

BURKHARD, H ;

DINGES, HW ;

KUPHAL, E .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :655-662

[2] SMALL-AREA, HIGH-RADIANCE CW INGAASP LEDS EMITTING AT 1.2 TO 1.3 MUM [J].

DENTAI, AG ;

LEE, TP ;

BURRUS, CA ;

BUEHLER, E .

ELECTRONICS LETTERS, 1977, 13 (16) :484-485

[3] TEMPERATURE-DEPENDENCE OF THRESHOLD AND ELECTRICAL CHARACTERISTICS OF INGAASP-INP DH LASERS [J].

DUTTA, NK ;

NELSON, RJ ;

BARNES, PA .

ELECTRONICS LETTERS, 1980, 16 (17) :653-654

[4] TEMPERATURE-DEPENDENCE OF INGAASP DOUBLE-HETEROSTRUCTURE LASER CHARACTERISTICS [J].

NAHORY, RE ;

POLLOCK, MA ;

DEWINTER, JC .

ELECTRONICS LETTERS, 1979, 15 (21) :695-696

[5] OPTICALLY INDUCED CATASTROPHIC DEGRADATION IN INGAASP/INP LAYERS [J].

TEMKIN, H ;

MAHAJAN, S ;

DIGIUSEPPE, MA ;

DENTAI, AG .

APPLIED PHYSICS LETTERS, 1982, 40 (07) :562-565

[6] NONRADIATIVE CARRIER LOSS AND TEMPERATURE SENSITIVITY OF THRESHOLD IN 1.27 MU-M (GALN)(ASP)-INP DH LASERS [J].

THOMPSON, GHB ;

HENSHALL, GD .

ELECTRONICS LETTERS, 1980, 16 (01) :42-44

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